Parameters | |
---|---|
Max Collector Current | 10A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 3A 4V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 700mV @ 700mA, 7A |
Collector Emitter Breakdown Voltage | 140V |
Current - Collector (Ic) (Max) | 10A |
Transition Frequency | 20MHz |
Collector Base Voltage (VCBO) | 140V |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 70 |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tube |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Max Power Dissipation | 100W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | 2STW |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 100W |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 20MHz |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
Collector Emitter Voltage (VCEO) | 140V |