3GBJ3516-BP
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Through Hole |
| Package / Case | 5-SIP, TSB-5 |
| Surface Mount | NO |
| Diode Element Material | SILICON |
| Operating Temperature | -55°C~150°C |
| Packaging | Bulk |
| Published | 2005 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Technology | Standard |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| JESD-30 Code | X-PSFM-T5 |
| Number of Elements | 6 |
| Configuration | BRIDGE, 6 ELEMENTS |
| Diode Type | Three Phase |
| Current - Reverse Leakage @ Vr | 10μA @ 1600V |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 17.5A |
| Output Current-Max | 35A |
| Current - Average Rectified (Io) | 35A |
| Number of Phases | 3 |
| Non-rep Pk Forward Current-Max | 400A |
| Voltage - Peak Reverse (Max) | 1.6kV |
| Breakdown Voltage-Min | 1600V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
