3N251-E4/45
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 4-SIP, KBPM |
| Number of Pins | 4 |
| Diode Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2011 |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Terminal Finish | Silver (Ag) |
| Additional Feature | UL RECOGNIZED |
| Subcategory | Bridge Rectifier Diodes |
| Technology | Standard |
| Base Part Number | 3N251 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Diode Type | Single Phase |
| Current - Reverse Leakage @ Vr | 5μA @ 800V |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 1A |
| Case Connection | ISOLATED |
| Max Reverse Leakage Current | 5μA |
| Max Surge Current | 60A |
| Current - Average Rectified (Io) | 1.5A |
| Forward Voltage | 1.3V |
| Number of Phases | 1 |
| Peak Reverse Current | 5μA |
| Max Repetitive Reverse Voltage (Vrrm) | 800V |
| Peak Non-Repetitive Surge Current | 60A |
| Height | 11.68mm |
| Length | 15.24mm |
| Width | 5.08mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
