3SK264-5-TG-E
| Parameters | |
|---|---|
| Continuous Drain Current (ID) | 30mA |
| Gate to Source Voltage (Vgs) | 8V |
| Gain | 23dB |
| Drain Current-Max (Abs) (ID) | 0.03A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Noise Figure | 2.2dB |
| Voltage - Test | 6V |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 weeks ago) |
| Contact Plating | Tin |
| Package / Case | TO-253-4, TO-253AA |
| Surface Mount | YES |
| Number of Pins | 4 |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 200mW |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 30mA |
| Frequency | 200MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Element Configuration | Dual |
| Power Dissipation | 200mW |
| Current - Test | 10mA |
| Drain to Source Voltage (Vdss) | 15V |
| Transistor Type | N-Channel Dual Gate |
See Relate Datesheet
