6A10B-G
| Parameters | |
|---|---|
| JESD-30 Code | O-PALF-W2 |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 10μA @ 1000V |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 6A |
| Case Connection | ISOLATED |
| Operating Temperature - Junction | -55°C~125°C |
| Output Current-Max | 6A |
| Application | GENERAL PURPOSE |
| Voltage - DC Reverse (Vr) (Max) | 1000V |
| Max Reverse Voltage (DC) | 1kV |
| Average Rectified Current | 6A |
| Number of Phases | 1 |
| Capacitance @ Vr, F | 100pF @ 4V 1MHz |
| Non-rep Pk Forward Current-Max | 300A |
| Reverse Current-Max | 10μA |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | R6, Axial |
| Diode Element Material | SILICON |
| Packaging | Bulk |
| Published | 2012 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Terminal Form | WIRE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | 6A10 |
See Relate Datesheet
