6HP04MH-TL-W
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, Flat Lead |
| Weight | 124.596154mg |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-F3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| Number of Channels | 1 |
| Power Dissipation-Max | 600mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 18.4 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 4.2 Ω @ 190mA, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 24.1pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 370mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 0.84nC @ 10V |
| Rise Time | 15.2ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 41 ns |
| Turn-Off Delay Time | 113 ns |
| Continuous Drain Current (ID) | 370mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.37A |
| Drain to Source Breakdown Voltage | -60V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
