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A2G26H281-04SR3

AIRFAST RF POWER GAN TRANSISTOR


  • Manufacturer: NXP USA Inc.
  • Nocochips NO: 568-A2G26H281-04SR3
  • Package: NI-780S-4L
  • Datasheet: PDF
  • Stock: 171
  • Description: AIRFAST RF POWER GAN TRANSISTOR (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Package / Case NI-780S-4L
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 125V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 2.496GHz~2.69GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current - Test 150mA
Transistor Type LDMOS
Gain 14.2dB
Power - Output 50W
Voltage - Test 48V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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