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A2G35S200-01SR3

AIRFAST RF POWER GAN TRANSISTOR


  • Manufacturer: NXP USA Inc.
  • Nocochips NO: 568-A2G35S200-01SR3
  • Package: NI-400S-2S
  • Datasheet: PDF
  • Stock: 163
  • Description: AIRFAST RF POWER GAN TRANSISTOR (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Package / Case NI-400S-2S
Packaging Tape & Reel (TR)
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 125V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 3.4GHz~3.6GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current - Test 291mA
Transistor Type LDMOS
Gain 16.1dB
Power - Output 180W
Voltage - Test 48V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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