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A2T18H455W23NR6

AIRFAST RF POWER LDMOS TRANSISTO


  • Manufacturer: NXP USA Inc.
  • Nocochips NO: 568-A2T18H455W23NR6
  • Package: OM-1230-4L2S
  • Datasheet: PDF
  • Stock: 899
  • Description: AIRFAST RF POWER LDMOS TRANSISTO (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Package / Case OM-1230-4L2S
Packaging Tape & Reel (TR)
Published 2009
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Voltage - Rated 65V
Current Rating (Amps) 10μA
Peak Reflow Temperature (Cel) 260
Frequency 1.805GHz~1.88GHz
Time@Peak Reflow Temperature-Max (s) 40
Current - Test 1.08A
Transistor Type LDMOS
Gain 14.5dB
Power - Output 56dBm
Voltage - Test 31.5V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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