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A2T18S261W12NR3

AIRFAST RF POWER LDMOS TRANSISTO


  • Manufacturer: NXP USA Inc.
  • Nocochips NO: 568-A2T18S261W12NR3
  • Package: OM-880X-2L2L
  • Datasheet: PDF
  • Stock: 360
  • Description: AIRFAST RF POWER LDMOS TRANSISTO (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Package / Case OM-880X-2L2L
Packaging Tape & Reel (TR)
Published 2006
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Voltage - Rated 65V
Current Rating (Amps) 10μA
Peak Reflow Temperature (Cel) 260
Frequency 1.805GHz~1.88GHz
Time@Peak Reflow Temperature-Max (s) 40
Current - Test 1.5A
Transistor Type LDMOS
Gain 18.2dB
Power - Output 280W
Voltage - Test 28V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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