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AFT26H200W03SR6

FET RF 2CH 65V 2.5GHZ NI1230S-4


  • Manufacturer: NXP USA Inc.
  • Nocochips NO: 568-AFT26H200W03SR6
  • Package: NI-1230-4S
  • Datasheet: -
  • Stock: 957
  • Description: FET RF 2CH 65V 2.5GHZ NI1230S-4 (Kg)

Details

Tags

Parameters
Transistor Type LDMOS
Gain 14.1dB
Power - Output 45W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Package / Case NI-1230-4S
Packaging Tape & Reel (TR)
Published 2006
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 65V
HTS Code 8541.29.00.40
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Frequency 2.5GHz
Time@Peak Reflow Temperature-Max (s) 40
Operating Temperature (Max) 225°C
Configuration Single
Current - Test 500mA
Polarity/Channel Type N-CHANNEL
See Relate Datesheet

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