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AFV121KGSR5

BROADBAND RF POWER LDMOS TRANSISTOR, 960-1215 MHZ, 1000 W PE


  • Manufacturer: NXP USA Inc.
  • Nocochips NO: 568-AFV121KGSR5
  • Package: NI-1230-4S GW
  • Datasheet: PDF
  • Stock: 832
  • Description: BROADBAND RF POWER LDMOS TRANSISTOR, 960-1215 MHZ, 1000 W PE (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Package / Case NI-1230-4S GW
Packaging Tape & Reel (TR)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Voltage - Rated 112V
HTS Code 8541.29.00.75
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 960MHz~1.22GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current - Test 100mA
Transistor Type LDMOS (Dual)
Gain 19.6dB
Power - Output 1000W
Voltage - Test 50V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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