Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2011 |
Pbfree Code | yes |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Pin Count | 3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 1.4W Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 1.4W |
Turn On Delay Time | 6.5 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 44m Ω @ 4.3A, 10V |
Vgs(th) (Max) @ Id | 1.3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 4A Ta |
Gate Charge (Qg) (Max) @ Vgs | 12.2nC @ 4.5V |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
Vgs (Max) | ±12V |
Turn-Off Delay Time | 41 ns |
Continuous Drain Current (ID) | -4A |
Threshold Voltage | -900mV |
Gate to Source Voltage (Vgs) | 12V |
Drain Current-Max (Abs) (ID) | 4A |
Drain-source On Resistance-Max | 0.05Ohm |
Drain to Source Breakdown Voltage | -30V |
Max Junction Temperature (Tj) | 150°C |
Height | 1.25mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |