AO3406
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1.4W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.4W |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 50m Ω @ 3.6A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 3.6A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.065Ohm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
