AO3419
| Parameters | |
|---|---|
| Threshold Voltage | -500mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain-source On Resistance-Max | 0.075Ohm |
| Drain to Source Breakdown Voltage | -20V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.25mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.4W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.4W |
| Turn On Delay Time | 11 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 85m Ω @ 3.5A, 10V |
| Vgs(th) (Max) @ Id | 1.4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 4.4nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 10V |
| Vgs (Max) | ±12V |
| Turn-Off Delay Time | 22 ns |
| Continuous Drain Current (ID) | -3.5A |
See Relate Datesheet
