Parameters | |
---|---|
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Pin Count | 8 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 3W Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3W |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 16m Ω @ 11A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4750pF @ 6V |
Current - Continuous Drain (Id) @ 25°C | 11A Ta |
Gate Charge (Qg) (Max) @ Vgs | 47nC @ 4.5V |
Drain to Source Voltage (Vdss) | 12V |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±8V |
Continuous Drain Current (ID) | 11A |
Gate to Source Voltage (Vgs) | 8V |
RoHS Status | RoHS Compliant |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |