Parameters | |
---|---|
Technology | MOSFET (Metal Oxide) |
Power Dissipation-Max | 3.1W Ta |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 11.5m Ω @ 14A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1920pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 14A Ta |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 14A |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2010 |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |