Parameters | |
---|---|
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 2.1W Ta |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2W |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 45m Ω @ 5A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1450pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 5.5A Ta |
Gate Charge (Qg) (Max) @ Vgs | 17.2nC @ 4.5V |
Drain to Source Voltage (Vdss) | 20V |
Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
Vgs (Max) | ±8V |
Continuous Drain Current (ID) | 5.5A |
Gate to Source Voltage (Vgs) | 8V |
Drain Current-Max (Abs) (ID) | 5A |
Drain-source On Resistance-Max | 0.045Ohm |
DS Breakdown Voltage-Min | 20V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SC-74, SOT-457 |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2007 |
JESD-609 Code | e3 |
Part Status | Last Time Buy |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Pin Count | 6 |
Number of Elements | 1 |