AOD1N60
| Parameters | |
|---|---|
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 1.3A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 2.6mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature | -50°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Technology | MOSFET (Metal Oxide) |
| Number of Channels | 1 |
| Power Dissipation-Max | 45W Tc |
| Power Dissipation | 45W |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 9 Ω @ 650mA, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 160pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
See Relate Datesheet
