Parameters | |
---|---|
Continuous Drain Current (ID) | -40A |
Threshold Voltage | -1.7V |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Gate to Source Voltage (Vgs) | 20V |
Number of Pins | 3 |
Drain-source On Resistance-Max | 0.022Ohm |
Drain to Source Breakdown Voltage | -40V |
Transistor Element Material | SILICON |
Pulsed Drain Current-Max (IDM) | 50A |
Max Junction Temperature (Tj) | 175°C |
Operating Temperature | -55°C~175°C TJ |
Height | 2.6mm |
Radiation Hardening | No |
Packaging | Tape & Reel (TR) |
RoHS Status | ROHS3 Compliant |
Published | 2008 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 2.5W Ta 62.5W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Case Connection | DRAIN |
Turn On Delay Time | 10 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 22m Ω @ 12A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1870pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 40A Tc |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Factory Lead Time | 1 Week |
Drain to Source Voltage (Vdss) | 40V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Mount | Surface Mount |
Turn-Off Delay Time | 38 ns |
Mounting Type | Surface Mount |