Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Terminal Form | GULL WING |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 2.1W Ta 60W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 60W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 20m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 2.7V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 7A Ta 37A Tc |
Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 37A |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.025Ohm |
Pulsed Drain Current-Max (IDM) | 60A |
DS Breakdown Voltage-Min | 60V |
Avalanche Energy Rating (Eas) | 45 mJ |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |