Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerVDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Pin Count | 8 |
JESD-30 Code | S-PDSO-F5 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 3.1W Ta 25W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 25W |
Case Connection | DRAIN |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 18m Ω @ 8A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 11A Ta 29A Tc |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 15V |
Drain to Source Voltage (Vdss) | 30V |
Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
Vgs (Max) | ±25V |
Continuous Drain Current (ID) | 29A |
Gate to Source Voltage (Vgs) | 25V |
DS Breakdown Voltage-Min | 30V |
RoHS Status | ROHS3 Compliant |