AOT15B60D
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2010 |
| Series | Alpha IGBT™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 167W |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 167W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.8V |
| Max Collector Current | 30A |
| Reverse Recovery Time | 196 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Test Condition | 400V, 15A, 20 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 15A |
| Gate Charge | 25.4nC |
| Current - Collector Pulsed (Icm) | 60A |
| Td (on/off) @ 25°C | 21ns/73ns |
| Switching Energy | 420μJ (on), 110μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
