Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2010 |
Series | SDMOS™ |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Number of Elements | 1 |
Configuration | Single |
Power Dissipation-Max | 1.9W Ta 333W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 333W |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 6.5m Ω @ 20A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 7950pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 12A Ta 150A Tc |
Gate Charge (Qg) (Max) @ Vgs | 129nC @ 10V |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On,Min Rds On) | 7V 10V |
Vgs (Max) | ±25V |
Continuous Drain Current (ID) | 150A |
Gate to Source Voltage (Vgs) | 25V |
RoHS Status | ROHS3 Compliant |