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APL1001J

MOSFET N-CH 1000V 18A SOT-227


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APL1001J
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 303
  • Description: MOSFET N-CH 1000V 18A SOT-227 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Weight 30.000004g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature UL RECOGNIZED
Subcategory FET General Purpose Power
Voltage - Rated DC 1kV
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 18A
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 520W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 520W
Case Connection ISOLATED
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Rise Time 14ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.6Ohm
Pulsed Drain Current-Max (IDM) 72A
Height 9.6mm
Length 38.2mm
Width 25.4mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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