APL502LG
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Weight | 10.6g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1997 |
| JESD-609 Code | e1 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 90mOhm |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Voltage - Rated DC | 500V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Current Rating | 58A |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 730W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 730W |
| Case Connection | DRAIN |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 90m Ω @ 29A, 12V |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 9000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 58A Tc |
| Rise Time | 27ns |
| Drive Voltage (Max Rds On,Min Rds On) | 15V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 56 ns |
| Continuous Drain Current (ID) | 58A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 500V |
| Pulsed Drain Current-Max (IDM) | 232A |
| Avalanche Energy Rating (Eas) | 3000 mJ |
| Height | 5.21mm |
| Length | 26.49mm |
| Width | 20.5mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
