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APT10021JLL

MOSFET N-CH 1000V 37A SOT-227


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT10021JLL
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 404
  • Description: MOSFET N-CH 1000V 37A SOT-227 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series POWER MOS 7®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Voltage - Rated DC 1kV
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 37A
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 694W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 694W
Case Connection ISOLATED
Turn On Delay Time 29 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 210m Ω @ 18.5A, 10V
Vgs(th) (Max) @ Id 5V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 9750pF @ 25V
Current - Continuous Drain (Id) @ 25°C 37A Tc
Gate Charge (Qg) (Max) @ Vgs 395nC @ 10V
Rise Time 22ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 37A
Gate to Source Voltage (Vgs) 30V
Avalanche Energy Rating (Eas) 3600 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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