Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
Mount | Chassis Mount, Screw |
Mounting Type | Chassis Mount |
Package / Case | SOT-227-4, miniBLOC |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 1997 |
Series | POWER MOS 7® |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 1kV |
Technology | MOSFET (Metal Oxide) |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Current Rating | 37A |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 694W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 694W |
Case Connection | ISOLATED |
Turn On Delay Time | 29 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 210m Ω @ 18.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 5mA |
Input Capacitance (Ciss) (Max) @ Vds | 9750pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 37A Tc |
Gate Charge (Qg) (Max) @ Vgs | 395nC @ 10V |
Rise Time | 22ns |
Drain to Source Voltage (Vdss) | 1000V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 20 ns |
Turn-Off Delay Time | 80 ns |
Continuous Drain Current (ID) | 37A |
Gate to Source Voltage (Vgs) | 30V |
Avalanche Energy Rating (Eas) | 3600 mJ |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |