Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 1997 |
Series | POWER MOS 7® |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | TIN SILVER COPPER |
Voltage - Rated DC | 1kV |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 12A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 298W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 298W |
Case Connection | DRAIN |
Turn On Delay Time | 9 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 950m Ω @ 6A, 10V |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 1969pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 12A Tc |
Gate Charge (Qg) (Max) @ Vgs | 71nC @ 10V |
Rise Time | 5ns |
Drain to Source Voltage (Vdss) | 1000V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 4 ns |
Turn-Off Delay Time | 23 ns |
Continuous Drain Current (ID) | 12A |
JEDEC-95 Code | TO-247AD |
Gate to Source Voltage (Vgs) | 30V |
Drain-source On Resistance-Max | 0.9Ohm |
Pulsed Drain Current-Max (IDM) | 48A |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |