APT100F50J
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1997 |
| Series | POWER MOS 8™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 960W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 960W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 105 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 36m Ω @ 75A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 24600pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 103A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 620nC @ 10V |
| Rise Time | 125ns |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 90 ns |
| Turn-Off Delay Time | 280 ns |
| Continuous Drain Current (ID) | 103A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 0.038Ohm |
| DS Breakdown Voltage-Min | 500V |
| Avalanche Energy Rating (Eas) | 3350 mJ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
