Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2005 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | PURE MATTE TIN |
Additional Feature | FAST SWITCHING |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 1.2kV |
Max Power Dissipation | 156W |
Current Rating | 25A |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | ISOLATED |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 25A |
JEDEC-95 Code | TO-220AB |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Turn On Time | 12 ns |
Test Condition | 800V, 8A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 8A |
Turn Off Time-Nom (toff) | 161 ns |
IGBT Type | NPT |
Gate Charge | 65nC |
Current - Collector Pulsed (Icm) | 44A |
Td (on/off) @ 25°C | 7ns/100ns |
Switching Energy | 300μJ (on), 285μJ (off) |
Gate-Emitter Voltage-Max | 30V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |