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APT11GF120KRG

IGBT 1200V 25A 156W TO220


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT11GF120KRG
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 506
  • Description: IGBT 1200V 25A 156W TO220 (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish PURE MATTE TIN
Additional Feature FAST SWITCHING
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 156W
Current Rating 25A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 25A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 12 ns
Test Condition 800V, 8A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 8A
Turn Off Time-Nom (toff) 161 ns
IGBT Type NPT
Gate Charge 65nC
Current - Collector Pulsed (Icm) 44A
Td (on/off) @ 25°C 7ns/100ns
Switching Energy 300μJ (on), 285μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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