banner_page

APT13003LZTR-G1

APT13003LZTR-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-APT13003LZTR-G1
  • Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Datasheet: PDF
  • Stock: 972
  • Description: APT13003LZTR-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Supplier Device Package TO-92
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 800mW
Element Configuration Single
Power - Max 800mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 6 @ 300mA 10V
Vce Saturation (Max) @ Ib, Ic 500mV @ 40mA, 200mA
Collector Emitter Breakdown Voltage 450V
Voltage - Collector Emitter Breakdown (Max) 450V
Current - Collector (Ic) (Max) 800mA
Collector Emitter Saturation Voltage 500mV
Emitter Base Voltage (VEBO) 9V
Height 4.7mm
Length 4.7mm
Width 3.7mm
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good