Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Bulk |
Published | 2016 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Max Power Dissipation | 20W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Number of Elements | 1 |
Element Configuration | Single |
Transistor Application | SWITCHING |
Gain Bandwidth Product | 4MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 1V |
Max Collector Current | 3.2A |
DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 2A 5V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 750mA, 3A |
Collector Emitter Breakdown Voltage | 450V |
Current - Collector (Ic) (Max) | 3.2A |
Transition Frequency | 4MHz |
Collector Emitter Saturation Voltage | 1V |
Collector Base Voltage (VCBO) | 10V |
Emitter Base Voltage (VEBO) | 9V |
Height | 11.2mm |
Length | 8.2mm |
Width | 2.9mm |
RoHS Status | ROHS3 Compliant |