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APT13005TF-G1

APT13005TF-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-APT13005TF-G1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 519
  • Description: APT13005TF-G1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

Details

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Parameters
Vce Saturation (Max) @ Ib, Ic 900mV @ 1A, 4A
Collector Emitter Breakdown Voltage 450V
Voltage - Collector Emitter Breakdown (Max) 450V
Current - Collector (Ic) (Max) 4A
Collector Emitter Saturation Voltage 900mV
Frequency - Transition 4MHz
Collector Base Voltage (VCBO) 10V
Emitter Base Voltage (VEBO) 9V
Height 16mm
Length 10.3mm
Width 4.9mm
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220-3
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2017
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 28W
Element Configuration Single
Power - Max 28W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 900mV
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 2A 5V
See Relate Datesheet

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