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APT13GP120KG

IGBT 1200V 41A 250W TO220


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT13GP120KG
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 160
  • Description: IGBT 1200V 41A 250W TO220 (Kg)

Details

Tags

Parameters
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 21 ns
Test Condition 600V, 13A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 13A
Turn Off Time-Nom (toff) 270 ns
IGBT Type PT
Gate Charge 55nC
Current - Collector Pulsed (Icm) 50A
Td (on/off) @ 25°C 9ns/28ns
Switching Energy 114μJ (on), 165μJ (off)
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series POWER MOS 7®
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 1.2kV
Max Power Dissipation 250W
Current Rating 41A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 41A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 1.2kV
See Relate Datesheet

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