APT150GN120J
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Chassis Mount, Screw |
| Mounting Type | Chassis Mount |
| Package / Case | ISOTOP |
| Number of Pins | 4 |
| Weight | 30.000004g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Published | 1999 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | LOW CONDUCTION LOSS, UL RECOGNIZED |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 1.2kV |
| Max Power Dissipation | 625W |
| Terminal Position | UPPER |
| Terminal Form | UNSPECIFIED |
| Current Rating | 215A |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | Single |
| Case Connection | ISOLATED |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 215A |
| Current - Collector Cutoff (Max) | 100μA |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 1.7V |
| Input Capacitance | 9.5nF |
| Turn On Time | 120 ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 150A |
| Turn Off Time-Nom (toff) | 955 ns |
| IGBT Type | Trench Field Stop |
| NTC Thermistor | No |
| Gate-Emitter Voltage-Max | 30V |
| Input Capacitance (Cies) @ Vce | 9.5nF @ 25V |
| Height | 9.6mm |
| Length | 38.2mm |
| Width | 25.4mm |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
