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APT150GN60JDQ4

IGBT MOD 600V 220A 536W ISOTOP


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT150GN60JDQ4
  • Package: ISOTOP
  • Datasheet: PDF
  • Stock: 181
  • Description: IGBT MOD 600V 220A 536W ISOTOP (Kg)

Details

Tags

Parameters
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 220A
Pin Count 4
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Turn On Delay Time 44 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Turn-Off Delay Time 430 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 220A
Current - Collector Cutoff (Max) 50μA
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.5V
Input Capacitance 9.2nF
Turn On Time 154 ns
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 150A
Turn Off Time-Nom (toff) 575 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Gate-Emitter Voltage-Max 30V
Input Capacitance (Cies) @ Vce 9.2nF @ 25V
Gate-Emitter Thr Voltage-Max 6.5V
Height 9.6mm
Length 38.2mm
Width 25.4mm
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case ISOTOP
Number of Pins 4
Weight 30.000004g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature HIGH RELIABILITY, UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 536W
See Relate Datesheet

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