APT15GN120BDQ1G
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1999 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | TIN SILVER COPPER |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 1.2kV |
| Max Power Dissipation | 195W |
| Current Rating | 45A |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 45A |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Turn On Time | 19 ns |
| Test Condition | 800V, 15A, 4.3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 15A |
| Turn Off Time-Nom (toff) | 355 ns |
| IGBT Type | Trench Field Stop |
| Gate Charge | 90nC |
| Td (on/off) @ 25°C | 10ns/150ns |
| Switching Energy | 410μJ (on), 950μJ (off) |
| Gate-Emitter Voltage-Max | 30V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
