Parameters | |
---|---|
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2005 |
Series | POWER MOS 7® |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | TIN SILVER COPPER |
Additional Feature | LOW CONDUCTION LOSS |
Voltage - Rated DC | 600V |
Max Power Dissipation | 250W |
Current Rating | 56A |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 56A |
JEDEC-95 Code | TO-220AB |
Collector Emitter Breakdown Voltage | 600V |
Turn On Time | 20 ns |
Test Condition | 400V, 15A, 5 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 15A |
Turn Off Time-Nom (toff) | 157 ns |
IGBT Type | PT |
Gate Charge | 55nC |
Current - Collector Pulsed (Icm) | 65A |
Td (on/off) @ 25°C | 8ns/29ns |
Switching Energy | 130μJ (on), 121μJ (off) |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |