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APT200GN60B2G

IGBT 600V 283A 682W TO247


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT200GN60B2G
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 927
  • Description: IGBT 600V 283A 682W TO247 (Kg)

Details

Tags

Parameters
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1999
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 682W
Pin Count 3
Element Configuration Single
Input Type Standard
Turn On Delay Time 50 ns
Power - Max 682W
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 560 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 283A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 200A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 200A
IGBT Type Trench Field Stop
Gate Charge 1180nC
Current - Collector Pulsed (Icm) 600A
Td (on/off) @ 25°C 50ns/560ns
Switching Energy 13mJ (on), 11mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
See Relate Datesheet

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