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APT20M11JVFR

Trans MOSFET N-CH 200V 175A 4-Pin SOT-227


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT20M11JVFR
  • Package: SOT-227-4, miniBLOC
  • Datasheet: PDF
  • Stock: 693
  • Description: Trans MOSFET N-CH 200V 175A 4-Pin SOT-227 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Weight 30.000004g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series POWER MOS V®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature FREDFET
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 175A
Pin Count 4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 700W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700W
Case Connection ISOLATED
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 21600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 175A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 175A
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 700A
Avalanche Energy Rating (Eas) 3600 mJ
Height 9.6mm
Length 38.2mm
Width 25.4mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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