banner_page

APT25GN120SG

Trans IGBT Chip N-CH 1.2KV 67A 3-Pin(2+Tab) D3PAK


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT25GN120SG
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Datasheet: PDF
  • Stock: 486
  • Description: Trans IGBT Chip N-CH 1.2KV 67A 3-Pin(2+Tab) D3PAK (Kg)

Details

Tags

Parameters
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 22 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 280 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 67A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 39 ns
Test Condition 800V, 25A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 25A
Continuous Collector Current 67A
Turn Off Time-Nom (toff) 560 ns
IGBT Type Trench Field Stop
Gate Charge 155nC
Current - Collector Pulsed (Icm) 75A
Td (on/off) @ 25°C 22ns/280ns
Gate-Emitter Thr Voltage-Max 6.5V
Height 5.08mm
Length 16.05mm
Width 13.99mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 272W
Terminal Form GULL WING
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good