Parameters | |
---|---|
Peak Reflow Temperature (Cel) | 245 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 22 ns |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 280 ns |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 67A |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 1.7V |
Turn On Time | 39 ns |
Test Condition | 800V, 25A, 1 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 25A |
Continuous Collector Current | 67A |
Turn Off Time-Nom (toff) | 560 ns |
IGBT Type | Trench Field Stop |
Gate Charge | 155nC |
Current - Collector Pulsed (Icm) | 75A |
Td (on/off) @ 25°C | 22ns/280ns |
Gate-Emitter Thr Voltage-Max | 6.5V |
Height | 5.08mm |
Length | 16.05mm |
Width | 13.99mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 1999 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Additional Feature | HIGH RELIABILITY |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 272W |
Terminal Form | GULL WING |