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APT25GP120BG

IGBT 1200V 69A 417W TO247


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT25GP120BG
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 212
  • Description: IGBT 1200V 69A 417W TO247 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series POWER MOS 7®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature ULTRA FAST, LOW CONDUCTION LOSS
Voltage - Rated DC 1.2kV
Max Power Dissipation 417W
Current Rating 69A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 69A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 26 ns
Test Condition 600V, 25A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 25A
Turn Off Time-Nom (toff) 197 ns
IGBT Type PT
Gate Charge 110nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 12ns/70ns
Switching Energy 500μJ (on), 438μJ (off)
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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