Parameters | |
---|---|
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 521W |
Element Configuration | Single |
Input Type | Standard |
Turn On Delay Time | 16 ns |
Power - Max | 521W |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 122 ns |
Collector Emitter Voltage (VCEO) | 3.2V |
Max Collector Current | 75A |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Test Condition | 600V, 25A, 4.3 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 25A |
IGBT Type | NPT |
Gate Charge | 203nC |
Current - Collector Pulsed (Icm) | 100A |
Td (on/off) @ 25°C | 16ns/122ns |
Switching Energy | 742μJ (on), 427μJ (off) |
Gate-Emitter Voltage-Max | 30V |
Gate-Emitter Thr Voltage-Max | 6.5V |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2001 |
Part Status | Active |