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APT25GR120SSCD10

IGBT 1200V 75A 521W D3PAK


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT25GR120SSCD10
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Datasheet: PDF
  • Stock: 817
  • Description: IGBT 1200V 75A 521W D3PAK (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 521W
Element Configuration Single
Input Type Standard
Power - Max 521W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.2V
Max Collector Current 75A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 25A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 25A
IGBT Type NPT
Gate Charge 203nC
Current - Collector Pulsed (Icm) 100A
Td (on/off) @ 25°C 16ns/122ns
Switching Energy 434μJ (on), 466μJ (off)
Gate-Emitter Thr Voltage-Max 6.5V
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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