Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Weight | 38.000013g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 1999 |
Series | Thunderbolt IGBT® |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 1.2kV |
Max Power Dissipation | 347W |
Current Rating | 54A |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 54A |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 3.2V |
Turn On Time | 41 ns |
Test Condition | 800V, 25A, 5 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 25A |
Continuous Collector Current | 54A |
Turn Off Time-Nom (toff) | 186 ns |
IGBT Type | NPT |
Gate Charge | 170nC |
Current - Collector Pulsed (Icm) | 75A |
Td (on/off) @ 25°C | 14ns/150ns |
Switching Energy | 930μJ (on), 720μJ (off) |
Gate-Emitter Voltage-Max | 30V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Height | 5.31mm |
Length | 21.46mm |
Width | 16.26mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |