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APT30GP60B2DLG

Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) T-MAX


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT30GP60B2DLG
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 386
  • Description: Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) T-MAX (Kg)

Details

Tags

Parameters
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 463W
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 463W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 100A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 31 ns
Test Condition 400V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 30A
Turn Off Time-Nom (toff) 164 ns
IGBT Type PT
Gate Charge 90nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 13ns/55ns
Switching Energy 260μJ (on), 250μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Radiation Hardening No
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Lifecycle Status OBSOLETE (Last Updated: 3 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
See Relate Datesheet

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