Parameters | |
---|---|
Lifecycle Status | OBSOLETE (Last Updated: 3 weeks ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-264-3, TO-264AA |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 1999 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 463W |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 463W |
Transistor Application | MOTOR CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 2.7V |
Max Collector Current | 100A |
Collector Emitter Breakdown Voltage | 600V |
Turn On Time | 31 ns |
Test Condition | 400V, 30A, 5 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 30A |
Turn Off Time-Nom (toff) | 164 ns |
IGBT Type | PT |
Gate Charge | 90nC |
Current - Collector Pulsed (Icm) | 120A |
Td (on/off) @ 25°C | 13ns/55ns |
Switching Energy | 260μJ (on), 250μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6V |
RoHS Status | RoHS Compliant |