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APT30GS60KRG

Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT30GS60KRG
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 345
  • Description: Trans IGBT Chip N-CH 600V 54A 3-Pin(3+Tab) TO-220 (Kg)

Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 250W
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 250W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 54A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Turn On Time 45 ns
Test Condition 400V, 30A, 9.1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.15V @ 15V, 30A
Turn Off Time-Nom (toff) 412 ns
IGBT Type NPT
Gate Charge 145nC
Current - Collector Pulsed (Icm) 113A
Td (on/off) @ 25°C 16ns/360ns
Switching Energy 570μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 5V
Radiation Hardening No
RoHS Status RoHS Compliant
See Relate Datesheet

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