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APT30GT60BRDQ2G

Trans IGBT Chip N-CH 600V 64A 3-Pin(3+Tab) TO-247


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT30GT60BRDQ2G
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 161
  • Description: Trans IGBT Chip N-CH 600V 64A 3-Pin(3+Tab) TO-247 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series Thunderbolt IGBT®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 250W
Current Rating 64A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 64A
Reverse Recovery Time 22 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 32 ns
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Turn Off Time-Nom (toff) 345 ns
IGBT Type NPT
Gate Charge 7.5nC
Current - Collector Pulsed (Icm) 110A
Td (on/off) @ 25°C 12ns/225ns
Switching Energy 80μJ (on), 605μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 5V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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