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APT35GA90B

IGBT 900V 63A 290W TO-247


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-APT35GA90B
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 138
  • Description: IGBT 900V 63A 290W TO-247 (Kg)

Details

Tags

Parameters
Max Power Dissipation 290W
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 290W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 900V
Max Collector Current 63A
Collector Emitter Breakdown Voltage 900V
Turn On Time 25 ns
Test Condition 600V, 18A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 18A
Turn Off Time-Nom (toff) 298 ns
IGBT Type PT
Gate Charge 84nC
Current - Collector Pulsed (Icm) 105A
Td (on/off) @ 25°C 12ns/104ns
Switching Energy 642μJ (on), 382μJ (off)
Radiation Hardening No
RoHS Status RoHS Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series POWER MOS 8™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
See Relate Datesheet

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