Parameters | |
---|---|
Max Power Dissipation | 290W |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 290W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 900V |
Max Collector Current | 63A |
Collector Emitter Breakdown Voltage | 900V |
Turn On Time | 25 ns |
Test Condition | 600V, 18A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3.1V @ 15V, 18A |
Turn Off Time-Nom (toff) | 298 ns |
IGBT Type | PT |
Gate Charge | 84nC |
Current - Collector Pulsed (Icm) | 105A |
Td (on/off) @ 25°C | 12ns/104ns |
Switching Energy | 642μJ (on), 382μJ (off) |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Series | POWER MOS 8™ |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | TIN SILVER COPPER |
Additional Feature | LOW CONDUCTION LOSS |